Simulator for analyzing the effects of crystal orientation.
A tool for analyzing the effect of crystal orientation on the optical properties of GaN substrate devices.
An explanation of crystal orientation and polarization. Introduction of physical models to explore the effects of crystal orientation, such as the k.p. method for analyzing quantum wells (QW) at arbitrary crystal orientations. Examples of results using InGaN/GaN QW, including a comparison of optical gain at different crystal orientations, the effects of crystal orientation on c-plane and m-plane, and a comparison of semiconductor laser diode (LD) performance through finite-element simulation.
- Company：クロスライトソフトウェアインク日本支社
- Price：Other
